Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

In this work, the effects of N2 addition to SF6 plasma used in isotropic silicon etching Micro-electromechanical systems (MEMS) with Au components are investigated. A four-variables Doehlert design was implemented for optimizing parameters (power, pressure, gas flow rate, and N2/SF6 ratio) maximize lateral etch rate Si using SF6/N2 mixture. The optimized condition founded a 1.8 µm/min was: power = 143 W, chamber pressure 86 mTorr, 22 sccm, ratio 0.1. Furthermore, it demonstrated that established process avoids structure damage components.